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4N60L-B-TM3-T Datasheet
Datasheet specifications
| Datasheet's name | 4N60L-B-TM3-T |
|---|---|
| File size | 47.392 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet 4N60L-B-TM3-T |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: UTC(Unisonic Tech) 4N60L-B-TM3-T
- Power Dissipation (Pd): 50W
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,2.2A
- Package: TO-251(IPAK)
- Manufacturer: UTC(Unisonic Tech)
